Modeling and Fabrication of a Nano-multiplication-region Avalanche Photodiode
نویسندگان
چکیده
A nano-multiplication-region avalanche photodiode (NAPD) featuring confinement of a multiplication region and a charging region in a nano-pillar was proposed for realization of novel near-constant-gain mode multiplication, low dark count rate, low afterpulsing and high avalanche initiation probability. Process and device simulations showed that near-constant-gain mode multiplication can be realized in NAPD with a properly doped charging layer. Prototype NAPDs were built with a feasible processing technology. First I-V characteristics of NAPD with plateau structures were observed.
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